APT50GP60LDLG Microsemi Corporation, APT50GP60LDLG Datasheet

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APT50GP60LDLG

Manufacturer Part Number
APT50GP60LDLG
Description
Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-264; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 50;
Manufacturer
Microsemi Corporation
Datasheet
1.APT50GP60LDLG.pdf (9 pages)
TYPICAL PERFORMANCE CURVES
Features
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• Low forward Diode Voltage (V
• Ultrasoft Recovery Diode
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
The POWER MOS 7
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high
frequency, high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Resonant Mode Combi IGBT
®
IGBT used in this resonant mode combi is a new generation of high
F
)
• SSOA Rated
• RoHS Compliant
1
(V
CE
CE
CE
Microsemi Website - http://www.microsemi.com
7
= V
= 600V, V
= 600V, V
@ T
GE
GE
C
GE
GE
J
= 110°C
= 15V, I
= 15V, I
C
= 150°C
, I
= ±20V)
= 25°C
C
GE
= 1mA, T
GE
GE
C
C
= 0V, I
= 0V, T
= 0V, T
= 50A, T
= 50A, T
j
C
Typical Applications
• Induction Heating
• Welding
• Medical
• High Power Telecom
• Resonant Mode Phase Shifted
= 25°C)
j
j
= 1.0mA)
= 25°C)
= 125°C)
Bridge
j
j
= 25°C)
= 125°C)
All Ratings: T
2
®
2
C
= 25°C unless otherwise specifi ed.
APT50GP60LDL(G)
600V, 50A, V
MIN
600
3
190A @ 600V
-55 to 150
Ratings
G
600
±30
150
190
625
300
TYP
72
4.5
2.2
2.1
C
CE(ON)
E
APT50GP60LDL(G)
G
2750
MAX
±100
525
2.7
= 2.2V Typical
6
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT50GP60LDLG Summary of contents

Page 1

TYPICAL PERFORMANCE CURVES Resonant Mode Combi IGBT ® The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller") Charge gc Switching Safe Operating ...

Page 3

TYPICAL PERFORMANCE CURVES -55° 25° 125° 0.5 1.0 1 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(V 100 250µs PULSE ...

Page 4

V = 15V 400V 25°C 125° 4.3Ω 100µ 100 110 I , COLLECTOR ...

Page 5

TYPICAL PERFORMANCE CURVES 10,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0. 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0. ...

Page 6

APT50DL60 D.U.T. Figure 21, Inductive Switching Test Circuit 90 d(off) f Collector Voltage 90% 0 10% Switching Energy Collector Current Figure 23, Turn-off Switching Waveforms and Defi nitions Figure 22, Turn-on ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty Non-Repetitive Forward Surge Current (T FSM ...

Page 8

TYPICAL PERFORMANCE CURVES 120 T = 125°C J 100 T = 55° 25° 0.5 1.0 1 ANODE-TO-CATHODE VOLTAGE (V) F FIGURE 2, Forward Current vs. Forward Voltage 8000 ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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