APT50GP60LDLG Microsemi Corporation, APT50GP60LDLG Datasheet - Page 3

• Manufacturer Part Number: APT50GP60LDLG
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-264; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 50
• Manufacturer: Microsemi Corporation

TYPICAL PERFORMANCE CURVES
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
-50
FIGURE 1, Output Characteristics(V
V
0
0
6
CE
TEST<0.5 % DUTY
V
V
T
, COLLECTER-TO-EMITTER VOLTAGE (V)
1
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
GE
T
J
-25
J
= 125°C
0.5
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
, GATE-TO-EMITTER VOLTAGE (V)
T
2
8
J
I
= 25°C
T
C
T
J
0
T
J
3
= 100A
= 125°C
1.0
J
T
= -55°C
= 25°C
J
10
= -55°C
4
25
1.5
5
I
C
50
12
= 50A
6
<0.5 % DUTY CYCLE
2.0
250µs PULSE TEST
7
75
T
J
= 25°C.
I
14
C
8
2.5
= 25A
100 125
GE
= 15V)
9
3.0
16
10
FIGURE 8, DC Collector Current vs Case Temperature
33.5
FIGURE 6, On State Voltage vs Junction Temperature
200
180
160
140
120
100
2.5
1.5
0.5
70
60
50
40
30
20
10
16
14
12
10
80
60
40
20
0
8
6
4
2
0
3
2
1
0
0
FIGURE 2, Output Characteristics (V
-50
-50
V
0
0
CE
T
<0.5 % DUTY CYCLE
I
I
250µs PULSE TEST
C
J
C
T
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
20
= 50A
-25
= 100A
J
-25
= 125°C
0.5
V
Lead Temperature
GE
T
T
T
C
J
40
= 15V.
J
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
Limited
= 25°C
0
0
V
GATE CHARGE (nC)
T
1.0
CE
60
J
= -55°C
25
= 300V
V
CE
25
80 100 120 140 160 180
= 120V
1.5
I
50
C
= 50A
50
75 100 125 150
2.0
75
V
CE
APT50GP60LDL(G)
I
C
= 480V
2.5
100
= 25A
GE
= 10V)
125
3.0