APT50GP60LDLG Microsemi Corporation, APT50GP60LDLG Datasheet - Page 5

• Manufacturer Part Number: APT50GP60LDLG
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-264; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 50
• Manufacturer: Microsemi Corporation

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature. (°C)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
1,000
0.20
0.16
0.12
0.08
0.04
500
100
50
10
V
0
CE
Junction
temp. (°C)
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
(watts)
Power
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
20
.1055
0.00908
0.0193
0.0658
0.0658
10
30
-4
.346
0.00463
0.00218
0.0142
0.0142
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
oes
res
50
10
SINGLE PULSE
-3
220
100
Figure 20, Operating Frequency vs Collector Current
50
10
10 20
T
T
D = 50 %
V
R
J
C
CE
10
G
= 125
= 75
= 5Ω
200
180
160
140
120
100
-2
= 667V
Figure 18,Minimim Switching Safe Operating Area
80
60
40
20
0
°
I
°
C
C
0
C
30
, COLLECTOR CURRENT (A)
V
CE
100
40
, COLLECTOR TO EMITTER VOLTAGE
50
200
Note:
60 70
Peak T J = P DM x Z θJC + T C
300
10
Duty Factor D =
-1
400
t 1
80
t 2
500
90 100
APT50GP60LDL(G)
t 1
/
t 2
600
F
f
f
P
max1
max2
max
diss
1.0
700
=
= min (f
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
+ t
max
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f