FPD750SOT89CE Filtronic, FPD750SOT89CE Datasheet

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FPD750SOT89CE

Manufacturer Part Number
FPD750SOT89CE
Description
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Manufacturer
Filtronic
Datasheet
1.FPD750SOT89CE.pdf (12 pages)
L
F
•
•
•
•
•
•
G
The FPD750SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron
utilizes a 0.25 µm x 750 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The double recessed
gate structure minimizes parasitics to optimize
performance,
designed for improved linearity over a range of
bias conditions and i/p power levels.
E
Note: T
EATURES
LECTRICAL
ENERAL
Output Third-Order Intercept Point
OW
Tel: +44 (0) 1325 301111
Power at 1dB Gain Compression
Gate-Source Breakdown Voltage
Maximum Drain-Source Current
Saturated Drain-Source Current
Gate-Drain Breakdown Voltage
(from 15 to 5 dB below P1dB)
Gate-Source Leakage Current
25 dBm Output Power (P1dB)
18 dB Small-Signal Gain (SSG)
0.6 dB Noise Figure
39 dBm Output IP3
55% Power-Added Efficiency
FPD750SOT89E: RoHS compliant
(Directive 2002/95/EC)
Power-Added Efficiency
P
Thermal Resistance
AMBIENT
Small-Signal Gain
Pinch-Off Voltage
Transconductance
N
ARAMETER
Noise Figure
OISE
Mobility
D
(1.85GH
ESCRIPTION
= 22°C; RF specification measured at f = 1850 MHz using CW signal (except as noted)
S
with
PECIFICATIONS
H
Transistor
IGH
an
Z
):
:
L
epitaxial
Fax: +44 (0) 1325 306177
S
INEARITY
|VBDGD|
|VBDGS|
YMBOL
IMAX
P1dB
IGSO
RθJC
IDSS
PAE
SSG
GM
|VP|
IP3
NF
Specifications subject to change without notice
:
(pHEMT).
Filtronic Compound Semiconductors Ltd
structure
P
VDS = 5 V; IDS = 50% IDSS;
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
VDS = 1.3 V; IDS = 0.75 mA
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS = 0 V
It
ACKAGED P
Matched for best IP3
C
IGD = 0.75 mA
IGS = 0.75 mA
POUT = P1dB
ONDITIONS
VGS = -5 V
1
Email: sales@filcs.com
P
T
•
•
•
YPICAL
ACKAGE
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, and other types
of wireless infrastructure systems.
HEMT
A
:
PPLICATIONS
M
16.5
185
0.7
23
36
12
12
IN
FPD750SOT89
Website:
T
230
375
200
0.8
0.6
1.0
25
18
50
38
39
16
16
83
YP
:
1
www.filtronic.com
M
280
1.0
1.3
15
AX
Datasheet 3.0
RoHS
U
°C/W
dBm
dBm
NITS
mA
mA
mS
µA
dB
dB
%
V
V
V

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FPD750SOT89CE Summary of contents

Page 1

... IDSS VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ IMAX GM VDS = 1.3 V; VGS = 0 V IGSO VGS = -5 V |VP| VDS = 1.3 V; IDS = 0.75 mA |VBDGS| IGS = 0.75 mA IGD = 0.75 mA RθJC 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 Datasheet 3.0 HEMT : A : PPLICATIONS ...

Page 2

... TOT DC IN OUT : RF Input Power Output Power IN OUT PACK = 1.8W – (0.012 x (65 – 22)) = 1.28W TOT 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 Datasheet v3 BSOLUTE AXIMUM 8V -3V IDSS 7.5mA 175mW 175°C -55°C to 150°C 1 ...

Page 3

... Fax: +44 (0) 1325 306177 1.2 MSG 1 S21 0.8 0.6 0.4 0.2 0 5.5 6.5 7.5 8 Note: Device tuned for minimum noise figure 26.0 1.80 25.0 1.60 24.0 23.0 1.40 22.0 1.20 21.0 20.0 1.00 19.0 0.80 18.0 17.0 0.60 16.0 0.40 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 Datasheet v3.0 Biased @ 5V, 100mA N.F. (dB) Frequency (GHz) Biased @ 5V, 33% IDSS Data taken on Eval board @ 1.85GHz N.F. (dB) Temperature (C) Website: www.filtronic.com ...

Page 4

... VG=-0.25V the I-V curves presented above). Setting the V VG=0V will generally cause errors in the current measurements, even in stabilized circuits. 4.0 4.5 5.0 5.5 6.0 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 Drain Efficiency and PAE PAE Eff Input Power (dBm -23 ...

Page 5

... S ): YSTEM Swp Max 8GHz 7 GHz S22 Swp Min 0.5GHz 5 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 FPD750SOT89 POWER CONTUORS 900MHz 25dBm 24dBm 22dBm 23dBm 900 MHz is achieved at the point of output match. 1dB : ...

Page 6

... 33pF L1 L2 33pF C1 C2 1.45" FPD750SOT89 EVAL Board Schematic Description @ 0.9GHz Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 Vd + 1.0uF + -Vg Vd 0.01uF 33pF 20 Ohm 33pF L1 C1 Website: www.filtronic.com Datasheet v3.0 0.63" ...

Page 7

... 33pF C1 L2 33pF C2 L1 1.45" FPD750SOT89 EVAL Board Schematic @ 1.85GHz 33pF Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 + 1.0uF + 0.63" -Vg Vd 0.01uF 1.0uF 0.01uF 33pF 33pF 20 Ohm Website: www ...

Page 8

... Board Layout Vg 33pF 33pF 0.01uF Tab 33pF C1 L1 1.45" FPD750SOT89 EVAL Board Schematic Description @2.4 to 2.6GHz Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 Vd + 1.0uF + 0.01uF Ld 33pF C2 -Vg Vd 0.01uF 33pF 20 Ohm 33pF C1 C2 ...

Page 9

... Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 Datasheet v3.0 Noise Figure 0 NF (dB) Output 3rd Order Intercept Point OIP3 - (dBm) Website: www.filtronic.com ...

Page 10

... Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 S12m S12a S22m 0.003 94.4 0.448 0.016 77.5 0.438 0.028 64.7 0.406 0.038 55.2 0.379 0.046 47.2 0.352 ...

Page 11

... APE IMENSIONS AND PART ORIENTATION Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 : 11 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 Datasheet v3.0 ● Also available with horizontal part orientation ● Hub diameter = 80mm ● Devices per reel = 1000 Website: www ...

Page 12

... D ISCLAIMERS : This product is not designed for use in any space based or life sustaining/supporting equipment. O RDERING INFORMATION P ART FPD750SOT89 FPD750SOT89E FPD750SOT89CE (ESD) EB750SOT89(E)-BB EB750SOT89(E)-BA EB750SOT89(E)-BC EB750SOT89(E)-BE EB750SOT89(E)-BG EB750SOT89(E)-AH EB750SOT89(E)-AJ 12 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD750SOT89 Datasheet v3 ...

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