FPD750SOT89CE Filtronic, FPD750SOT89CE Datasheet - Page 4

• Manufacturer Part Number: FPD750SOT89CE
• Description: LOW NOISE HIGH LINEARITY PACKAGED PHEMT
• Manufacturer: Filtronic

T
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at V
of I
output power at 1dB gain compression.
YPICAL
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DSS
0.30
0.25
0.20
0.15
0.10
0.05
0.00
26.0
25.5
25.0
24.5
24.0
23.5
23.0
22.5
22.0
0.0
4
, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for maximum
0.5
T
5
UNED
1.0
Pout (dBm)
1.5
VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
6
Power Transfer Characteristic
RF P
2.0
Drain-Source Voltage (V)
7
DC IV Curves FPD750SOT89
Comp Point
Input Power (dBm)
2.5
ERFORMANCE
8
3.0
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Note:
intermodulation performance. This yields OIP3
values
enhancement is affected by the quiescent bias and
the matching applied to the device
3.5
20
18
16
14
12
10
9
4.0
-7.1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
10
4.5
Pout (dBm)
of
-6.0
5.0
11
pHEMT
about
:
-5.0
5.5
3rds (dBc)
12
VDS = 5V IDS = 50% IDSS at f = 1.85GHz
6.0
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
-0.50
Typical Intermodulation Performance
-4.0
VG=-1.50
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
P
Input Power (dBm)
1dB
devices
-3.0
4
+
-2.1
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Note: The recommended method for measuring I
any particular I
at 1.3V. This measurement point avoids the onset of
spurious self-oscillation which would normally distort the
current measurement (this effect has been filtered from
the I-V curves presented above). Setting the V
will generally cause errors in the current measurements,
even in stabilized circuits.
14dBm.
-1.0
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
have
.
1
0.0
PAE
This
enhanced
1.0
3
DS
Eff.
, is to set the Drain-Source voltage (V
1.9
IMD
Drain Efficiency and PAE
5
-23.00
-28.00
-33.00
-38.00
-43.00
FPD750SOT89
Input Power (dBm)
Website:
7
DS
www.filtronic.com
9
= 5V, I
Datasheet v3.0
11
DS
= 50%
DS
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
> 1.3V
DSS
, or
DS
)