BST80 NXP Semiconductors, BST80 Datasheet - Page 2

• Manufacturer Part Number: BST80
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
QUICK REFERENCE DATA
1997 Jun 20
SYMBOL
V
V
I
P
R
D
y
Low drain-source on-state resistance
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
Thin and thick film circuits
Relay, high-speed and line transformer drivers.
DS
GSO
tot
DSon
N-channel enhancement mode
vertical D-MOS transistor
fs
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
total power dissipation
drain-source on-state resistance
forward transfer admittance
PARAMETER
open drain
T
I
I
D
D
amb
= 500 mA; V
= 500 mA; V
25 C
2
CONDITIONS
PINNING - SOT89
handbook, halfpage
Marking code: KM
PIN
GS
DS
1
2
3
= 15 V
= 10 V
Bottom view
Fig.1 Simplified outline and symbol.
1
SYMBOL
d
g
s
2
3
2
300
source
drain
gate
TYP.
DESCRIPTION
MAM355
Product specification
g
80
500
1
3
20
MAX.
d
s
BST80
V
V
mA
W
mS
UNIT