BST80 NXP Semiconductors, BST80 Datasheet - Page 3

• Manufacturer Part Number: BST80
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. Device mounted on a ceramic substrate; area 2.5 cm
CHARACTERISTICS
T
1997 Jun 20
V
V
I
I
P
T
T
R
V
V
I
I
R
C
C
C
Switching times (see Figs 2 and 3)
t
t
D
DM
j
DSS
GSS
on
off
SYMBOL
SYMBOL
SYMBOL
y
stg
j
DS
GSO
tot
(BR)DSS
GSth
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
N-channel enhancement mode
vertical D-MOS transistor
fs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to ambient
PARAMETER
PARAMETER
PARAMETER
V
V
V
V
V
I
V
V
V
V
I
V
I
D
D
D
GS
DS
DS
DS
GS
DS
DS
DS
GS
GS
= 500 mA; V
= 500 mA
= 500 mA
open drain
T
= 10 V; I
= 0 to 10 V; V
= 10 to 0 V; V
= 0; I
= V
= 60 V; V
= 0; V
= 10 V; V
= 10 V; V
= 10 V; V
amb
2
; thickness 0.7 mm.
GS
3
D
note 1
GS
25 C; note 1
; I
CONDITIONS
= 10 A
D
D
CONDITIONS
GS
= 20 V
GS
GS
GS
= 1 mA
= 500 mA
DS
CONDITIONS
= 0; f = 1 MHz
= 0; f = 1 MHz
= 0; f = 1 MHz
= 0
= 15 V
DD
DD
= 50 V;
= 50 V;
80
1.5
MIN.
65
MIN.
VALUE
125
2
300
45
30
8
TYP.
Product specification
80
500
1
1
+150
150
20
MAX.
3.5
1
3
60
45
12
10
15
MAX. UNIT
100
BST80
UNIT
K/W
V
V
mA
A
W
C
C
UNIT
V
V
nA
mS
pF
pF
pF
ns
ns
A