BST120 NXP Semiconductors, BST120 Datasheet - Page 3

• Manufacturer Part Number: BST120
• Description: P-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Transistor mounted on ceramic substrate: area = 2,5 cm
April 1995
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Drain current (peak)
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient (note 1)
P-channel enhancement mode vertical
D-MOS transistor
amb
= 25 C (note 1)
3
2
and thickness = 0,7 mm.
P
T
T
R
V
V
I
I
stg
j
tot
th j-a
D
DM
DS
GSO
=
max.
max.
max.
max.
max.
max.
65 to + 150
Product specification
125 K/W
150
0.3 A
0.8 A
60 V
20 V
1 W
BST120
C
C