BST120 NXP Semiconductors, BST120 Datasheet - Page 4

• Manufacturer Part Number: BST120
• Description: P-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
April 1995
Drain-source breakdown voltage
Drain-source leakage current
Gate-source leakage current
Gate threshold voltage
Drain-source ON-resistance
Transfer admittance
Input capacitance at f = 1 MHz
Output capacitance at f = 1 MHz
Feedback capacitance at f = 1 MHz
Switching times (see Figs 2 and 3)
j
= 25 C unless otherwise specified
P-channel enhancement mode vertical
D-MOS transistor
I
V
V
I
I
I
V
V
V
I
D
D
D
D
D
DS
GS
DS
DS
DS
= 10 A; V
= 1 mA; V
= 200 mA; V
= 200 mA; V
= 200 mA; V
= 48 V; V
= 10 V; V
= 10 V; V
= 10 V; V
= 20 V; V
DS
GS
GS
DS
GS
GS
GS
= V
= 0
GS
DS
DD
= 0
= 0
= 0
= 0
= 0
GS
= 15 V
= 10 V
= 50 V; V
GS
= 0 to 10 V
4
R
C
C
C
t
t
on
off
V
I
I
V
Y
DS(on)
iss
oss
rss
DSS
GSS
(BR)DSS
GS(th)
fs
min.
max.
max.
min.
max.
typ.
typ.
max.
typ.
typ.
typ.
max.
typ.
max.
typ.
max.
Product specification
100 nA
200 mS
1.5
3.5
4.5
60 V
55
70
30
45
12
20
1
6
8
4
BST120
V
V
pF
pF
pF
pF
pF
pF
ns
ns
A