HY27US0812B Hynix Semiconductor, HY27US0812B Datasheet - Page 20

• Manufacturer Part Number: HY27US0812B
• Description: 512mb Nand Flash
• Manufacturer: Hynix Semiconductor

Rev 0.5 / Jul. 2007
CLE Setup time
CLE Hold time
CE setup time
CE hold time
WE pulse width
ALE setup time
ALE hold time
Data setup time
Data hold time
Write Cycle time
WE High hold time
Data Transfer from Cell to register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output High Z
CE High to Output High Z
RE or CE high to Output hold
RE High Hold Time
Output High Z to RE low
CE Access Time
WE High to RE low
Last RE High to busy (at sequential read)
CE High to Ready (in case of interception by CE at read)
CE High Hold Time (at the last serial read)
Device Resetting Time (Read / Program / Erase)
Write Protection time
NOTE:
1. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
2. The time to Ready depends on the value of the pull-up resistor tied R/B pin.ting time.
3. To break the sequential read cycle, CE must be held for longer time than tCEH.
4. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
5. Program / Erase Enable Operation : WP high to WE High.
Program / Erase Disable Operation : WP Low to WE High.
Parameter
(3)
Table 13: AC Timing Characteristics
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27US(08/16)12(1/2)B Series
Symbol
t
t
WW
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHR
t
t
t
t
t
t
t
t
t
t
RHZ
CHZ
REH
CLS
CLH
ALS
ALH
CLR
REA
t
CEA
CRY
CEH
RST
WC
WH
WB
WP
DH
t
OH
CS
CH
DS
AR
RR
RP
RC
RB
IR
R
(5)
Min
100
100
15
20
15
15
15
30
10
10
10
20
15
30
10
10
60
5
5
5
5
0
3.3V
olt
60+tr(R/B#)
5/10/500
Max
100
100
12
18
50
50
25
(1,2)
(4)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
20