HY27US0812B Hynix Semiconductor, HY27US0812B Datasheet - Page 40
HY27US0812B
Manufacturer Part Number
HY27US0812B
Description
512mb Nand Flash
Manufacturer
Hynix Semiconductor
Datasheet
1.HY27US0812B.pdf
(40 pages)
- Current page: 40 of 40
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MARKING INFORMATION -
Rev 0.5 / Jul. 2007
- h y n ix
- K O R
- H Y 2 7 U 0 8 1 2 x B x x x x
- Y : Y e ar (ex: 5= year 20 0 5 , 06 = year 20 0 6 )
- w w : W o rk W eek (e x: 12 = w ork w eek 12 )
- x x : P roce ss C o d e
N o te
- C a p ita l L e tte r
- S m a ll L e tte r
H Y : H yn ix
2 7 : N A N D Fla sh
U : P o w e r S u p p ly
S : C la ssifica tion
0 8 : B it O rg an iza tion
1 2 : D en sity
x : M o de
B : V e rsion
x : P acka ge T yp e
x : P acka g e M a te ria l
x : O p eratin g T e m perature
x : B ad B lo ck
P a ck a g
F B G A
H
x
FBGA
Y
x
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
2
x
: F (6 3 FB G A )
: B lank(N o rm al), P(Lead Free)
: C (0 ℃ ~ 7 0 ℃ ), I(-4 0℃ ~ 8 5℃ )
: B (In clu d ed B ad B lo ck), S (1 ~ 5 B ad B lo ck),
: H yn ix S ym b ol
: O rigin C o u n try
: P a rt N u m b e r
: U (2 .7 V ~ 3 .6 V )
: S in g le Le vel C e ll+ S in gle D ie + S m all B lo ck
: 0 8 (x8 )
: 5 1 2 M bit
: 1 n C E & 1 R /n B ; S e qu e n tia l R ow R e ad E n a b le
: 1 n C E & 1 R /n B ; S e qu e n tia l R ow R e ad D isa ble
: 3 rd G en e ratio n
: Fixed Ite m
: N o n -fixe d Item
P (A ll G oo d B lock)
7
x
M a rk in g E x a m p le
U
S
HY27US(08/16)12(1/2)B Series
0
Y
8
W
1
W
K
2
O
x
x
R
B
x
40
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