PDTA115E NXP Semiconductors, PDTA115E Datasheet - Page 4

• Manufacturer Part Number: PDTA115E
• Description: Pnp Resistor-equipped Transistors; R1 = 100 Kw, R2 = 100 Kw
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 m copper strip line.
2004 Jul 30
PDTA115EE
PDTA115EEF
PDTA115EK
PDTA115EM
PDTA115ES
PDTA115ET
PDTA115EU
V
V
V
V
I
I
P
T
T
T
O
CM
SYMBOL
stg
j
amb
CBO
CEO
EBO
I
tot
PNP resistor-equipped transistors;
R1 = 100 k , R2 = 100 k
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
positive
negative
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
PARAMETER
NAME
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands; body
1.0
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
0.6
open emitter
open base
open collector
T
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
amb
0.5 mm
25 C
4
CONDITIONS
PACKAGE
DESCRIPTION
65
65
MIN.
PDTA115E series
+10
250
500
200
250
150
250
250
+150
150
+150
Product specification
50
50
10
40
20
100
MAX.
VERSION
SOT416
SOT490
SOT346
SOT883
SOT323
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
SOT54
SOT23
C
C
C
UNIT