PDTA115E NXP Semiconductors, PDTA115E Datasheet - Page 5

• Manufacturer Part Number: PDTA115E
• Description: Pnp Resistor-equipped Transistors; R1 = 100 Kw, R2 = 100 Kw
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 m copper strip line.
CHARACTERISTICS
T
2004 Jul 30
R
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
th(j-a)
c
PNP resistor-equipped transistors;
R1 = 100 k , R2 = 100 k
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
PARAMETER
PARAMETER
V
V
V
T
V
V
I
I
I
I
f = 1 MHz
C
C
C
E
j
CB
CE
CE
EB
CE
= 150 C
= i
= 5 mA; I
= 100 A; V
= 1 mA; V
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0 A; V
5
T
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
CONDITIONS
amb
C
B
C
CONDITIONS
CE
E
B
B
CB
= 0 A
= 0.25 mA
= 5 mA
CE
25 C
= 0 A
= 0 A
= 0 A;
= 0.3 V
= 10 V;
= 5 V
80
70
0.8
MIN.
3
PDTA115E series
VALUE
500
250
625
500
833
500
500
100
1
TYP.
1.2
1.6
Product specification
130
1.2
3
MAX.
100
1
50
50
150
0.5
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
mV
V
V
k
pF
UNIT
A
A
A