PBRN113E NXP Semiconductors, PBRN113E Datasheet - Page 5

• Manufacturer Part Number: PBRN113E
• Description: Pbrn113e Series Npn 800 Ma, 40 V Biss Rets; R1 = 1 Kohm, R2 = 1 Kohm
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
PBRN113E_SER_1
Product data sheet
Table 7.
[1]
[2]
[3]
Symbol
R
R
Fig 2. Power derating curve for SOT54 (SC-43A/TO-92)
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
FR4 PCB, standard footprint
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
PBRN113EK, PBRN113ET
PBRN113ES
PBRN113EK, PBRN113ET
(mW)
P
tot
800
600
400
200
Rev. 01 — 1 March 2007
0
75
25
NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k
2
O
3
, standard footprint.
25
Conditions
in free air
75
PBRN113E series
125
T
006aaa999
amb
[1]
[2]
[3]
[1]
( C)
175
Min
-
-
-
-
-
Typ
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
500
338
219
179
105
2
.
Unit
K/W
K/W
K/W
K/W
K/W
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