PBRN113E NXP Semiconductors, PBRN113E Datasheet - Page 7

• Manufacturer Part Number: PBRN113E
• Description: Pbrn113e Series Npn 800 Ma, 40 V Biss Rets; R1 = 1 Kohm, R2 = 1 Kohm
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PBRN113E_SER_1
Product data sheet
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
1
1
3
2
1
10
3
2
10
Ceramic PCB, Al
SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values
FR4 PCB, standard footprint
SOT54 (SC-43A/TO-92); typical values
5
5
0.50
0.20
0.10
0.05
0.02
0.01
0.50
0.20
0.10
0.05
0.02
0.01
= 1
0
= 1
0
0.75
0.33
0.75
0.33
10
10
2
4
4
O
3
, standard footprint
10
10
3
3
10
10
2
2
Rev. 01 — 1 March 2007
10
10
1
1
NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k
1
1
PBRN113E series
10
10
10
10
2
2
© NXP B.V. 2007. All rights reserved.
t
t
p
p
006aab002
006aab003
(s)
(s)
10
10
3
3
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