PMD3001D NXP Semiconductors, PMD3001D Datasheet - Page 10
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PMD3001D
Manufacturer Part Number
PMD3001D
Description
Low Vcesat Biss Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.PMD3001D.pdf
(16 pages)
Philips Semiconductors
PMD3001D_1
Product data sheet
Fig 11. TR2 (PNP): DC current gain as a function of
Fig 13. TR2 (PNP): Base-emitter voltage as a function
(1) T
(2) T
(3) T
V
(1) T
(2) T
(3) T
h
(V)
FE
BE
800
600
400
200
1.0
0.8
0.6
0.4
0.2
0
V
collector current; typical values
V
of collector current; typical values
10
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 5 V
= 5 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
1
10
10
(1)
(2)
(3)
10
(1)
(2)
(3)
2
10
2
10
3
10
I
006aaa795
006aaa794
C
3
I
C
(mA)
(mA)
Rev. 01 — 26 September 2006
10
10
4
4
Fig 12. TR2 (PNP): Collector current as a function of
Fig 14. TR2 (PNP): Base-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
BEsat
(A)
(V)
I
C
2.4
1.6
0.8
1.2
1.0
0.8
0.6
0.4
0.2
0
T
collector-emitter voltage; typical values
10
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
B
1
= 20
= 25 C
= 55 C
= 25 C
= 100 C
IB (mA) = 24
1
1
21.6
19.2
16.8
14.4
12
10
2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
(1)
(2)
(3)
10
3
2
PMD3001D
10
4
006aaa799
006aaa798
MOSFET driver
V
3
I
C
CE
9.6
7.2
4.8
2.4
(mA)
(V)
10
5
4
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