PMD3001D NXP Semiconductors, PMD3001D Datasheet - Page 3
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PMD3001D
Manufacturer Part Number
PMD3001D
Description
Low Vcesat Biss Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.PMD3001D.pdf
(16 pages)
Philips Semiconductors
5. Limiting values
PMD3001D_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
I
I
I
Per device
P
T
T
T
C
CM
BM
Fig 1. Power derating curves
j
amb
stg
CBO
CEO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 01 — 26 September 2006
(mW)
P
2
tot
O
600
400
200
3
0
, standard footprint
75
25
2
(1)
(2)
(3)
O
3
, standard footprint.
Conditions
open emitter
open base
single pulse;
t
single pulse;
t
T
25
p
p
amb
2
1 ms
1 ms
25 C
75
125
T
006aaa784
amb
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
[2]
[3]
( C)
175
Min
-
-
-
-
-
-
-
-
-
-
65
65
PMD3001D
Max
40
40
1
2
0.3
1
330
400
580
150
+150
+150
MOSFET driver
Unit
V
V
A
A
A
A
mW
mW
mW
2
C
C
C
.
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