PMD9002D NXP Semiconductors, PMD9002D Datasheet - Page 10

• Manufacturer Part Number: PMD9002D
• Description: Low Vcesat Biss Transistors
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
PMD9002D_1
Product data sheet
Fig 13. TR2: Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
CEsat
(V)
10
10
1
1
2
10
I
function of collector current; typical values
C
amb
amb
amb
/I
1
B
= 20
= 100 C
= 25 C
= 55 C
1
(1)
(2)
(3)
Fig 15. Test circuit for switching times
10
I
C
= 0.05 A; I
10
2
oscilloscope
I
006aaa933
C
(mA)
B
= 2.5 mA; R
Rev. 01 — 20 November 2006
10
3
(probe)
450
V
I
C
= 180
DUT
Fig 14. TR2: Collector-emitter saturation voltage as a
R1
V
(1) I
(2) I
(3) I
CEsat
(V)
10
10
R2
1
1
2
10
T
function of collector current; typical values
C
C
C
amb
/I
/I
/I
TR1
1
B
B
B
R C
= 100
= 50
= 10
= 25 C
D1
TR2
1
(1)
(2)
(3)
V
O
V
CC
(probe)
450
10
006aaa936
oscilloscope
PMD9002D
10
© NXP B.V. 2006. All rights reserved.
2
I
006aaa934
C
MOSFET driver
(mA)
10
3
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