PMD9002D NXP Semiconductors, PMD9002D Datasheet - Page 7

• Manufacturer Part Number: PMD9002D
• Description: Low Vcesat Biss Transistors
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMD9002D_1
Product data sheet
Table 7.
T
[1]
Symbol Parameter
V
V
Diode (D1)
V
TR2 and D1
h
Device
t
t
t
t
t
t
d
r
on
s
f
off
amb
FE
BEsat
BE
F
Pulse test: t
= 25 C unless otherwise specified.
base-emitter saturation
voltage
base-emitter voltage
forward voltage
DC current gain
delay time
rise time
turn-on time
storage time
fall time
turn-off time
Characteristics
p
300 s;
Rev. 01 — 20 November 2006
0.02.
…continued
Conditions
I
I
V
V
I
V
V
V
I
C
C
F
C
CE
CE
CE
CE
CE
= 200 mA
= 10 mA; I
= 100 mA; I
= 0.05 A; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
C
C
C
C
C
B
B
= 2 mA
= 10 mA
= 1 mA
= 100 mA
= 200 mA
B
= 0.5 mA
= 2.5 mA
= 5 mA
[1]
Min
-
-
610
-
-
200
95
24
-
-
-
-
-
-
PMD9002D
Typ
0.7
0.9
660
-
-
290
140
35
13
70
83
1380
260
1640
© NXP B.V. 2006. All rights reserved.
MOSFET driver
Max
-
-
710
770
450
-
-
-
-
-
-
-
-
1.1
Unit
V
V
mV
mV
V
ns
ns
ns
ns
ns
ns
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