SUD50N03-12P Vishay, SUD50N03-12P Datasheet
SUD50N03-12P
Related parts for SUD50N03-12P
SUD50N03-12P Summary of contents
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... N-Channel MOSFET = 25_C UNLESS OTHERWISE NOTED) A Symbol T = 25_C 100_C 0 25_C 25_C A T Symbol sec R R Steady State R SUD50N03-12P Vishay Siliconix FEATURES D TrenchFETr Power MOSFET Limit " ...
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... SUD50N03-12P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...
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... T - Junction Temperature (_C) J Document Number: 72267 S-31875—Rev. , 15-Sep-03 New Product 0.05 0.04 25_C 0.03 125_C 0.02 0.01 0. 100 100 125 150 175 SUD50N03-12P Vishay Siliconix On-Resistance vs. Drain Current Drain Current (A) D Gate Charge ...
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... SUD50N03-12P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T - Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. Duty Cycle = 0.5 1 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. www.vishay.com 4 New Product 1000 100 10 1 0.1 0.01 125 150 175 ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...