SUD50N03-12P Vishay, SUD50N03-12P Datasheet - Page 3

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SUD50N03-12P

Manufacturer Part Number
SUD50N03-12P
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Document Number: 72267
S-31875—Rev. , 15-Sep-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
- 25
D
T
GS
C
= 15 A
C
rss
= - 55_C
5
= 10 V
10
V
T
0
DS
J
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
I
Transconductance
D
10
25
- Drain Current (A)
Capacitance
20
C
iss
50
15
75
C
oss
30
100
20
125
40
125_C
25
25_C
150
175
New Product
50
30
0.05
0.04
0.03
0.02
0.01
0.00
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 50 A
T
On-Resistance vs. Drain Current
V
J
= 15 V
GS
0.3
V
6
= 150_C
SD
20
Q
= 4.5 V
g
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
12
0.6
SUD50N03-12P
Vishay Siliconix
40
18
0.9
T
V
J
GS
= 25_C
60
www.vishay.com
= 10 V
24
1.2
80
30
1.5
3

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