SI5511DC Vishay, SI5511DC Datasheet
SI5511DC
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SI5511DC Summary of contents
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... Bottom View Ordering Information: Si5511DC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si5511DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... 2 1 N-Channel 2.4 A, di/dt = 100 A/µ P-Channel 1.5 A, di/ 100 A/µ Si5511DC Vishay Siliconix a Min Max Typ Ω P-Ch 78 117 N- P- Ω N-Ch 2 ...
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... Si5511DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0. 0.08 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 4 ...
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... BVDSS Limited 0. °C A Single Pulse 0.001 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si5511DC Vishay Siliconix 0.12 0.10 0.08 0. 125 ° °C A 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 50 40 ...
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... Si5511DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 6 Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 73787 S-72204-Rev. B, 22-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5511DC Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Si5511DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.5 0 0.2 0.1 0 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 2 Total Gate Charge (nC) ...
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... Limited DS(on 0 °C A 0.01 Single Pulse 0.001 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si5511DC Vishay Siliconix 0.40 0. 125 °C A 0.24 0. °C A 0.08 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si5511DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 73787 S-72204-Rev. B, 22-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5511DC Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 ° ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...