SI5511DC Vishay, SI5511DC Datasheet - Page 4

• Manufacturer Part Number: SI5511DC
• Description: N- And P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si5511DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
15
12
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
5
4
3
2
1
0
0.0
0
0
I
D
= 4.8 A
1
0.6
3
V
DS
Output Characteristics
V
Q
DS
- Drain-to-Source Voltage (V)
g
V
V
- Total Gate Charge (nC)
I
= 15 V
2
D
GS
GS
Gate Charge
- Drain Current (A)
1.2
6
= 5 V thru 3 V
= 2.5 V
3
1.8
V
9
GS
4
= 24 V
V
V
V
V
GS
GS
GS
GS
2.4
12
= 4.5 V
= 2.5 V
= 2 V
= 1.5 V
5
3.0
15
6
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
5
0.5
V
V
Transfer Characteristics
T
DS
0
GS
J
T
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
C
- Gate-to-Source Voltage (V)
10
= 25 °C
Capacitance
25
T
1.0
C
= 125 °C
50
S-72204-Rev. B, 22-Oct-07
15
Document Number: 73787
C
C
V
I
1.5
D
oss
iss
GS
75
= 4.8 A
20
= 4.5 V
V
I
D
100
GS
T
= 3.7 A
C
2.0
= 2.5 V
= - 55 °C
25
125
150
2.5
30