SI5511DC Vishay, SI5511DC Datasheet - Page 5

• Manufacturer Part Number: SI5511DC
• Description: N- And P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
0.001
1.5
1.3
1.1
0.9
0.7
0.5
0.01
0.1
10
20
- 50
0.0
1
Source-Drain Diode Forward Voltage
- 25
0.2
V
I
D
SD
T
0
A
= 250 µA
Threshold Voltage
= 150 °C
- Source-to-Drain Voltage (V)
T
0.4
J
25
- Temperature (°C)
50
0.6
T
75
A
0.001
= 25 °C
0.8
0.01
100
0.1
10
100
1
0.1
Safe Operating Area, Junction-to-Ambient
* V
1.0
Limited by r
125
GS
Single Pulse
T
A
= 25 °C
150
V
minimum V
DS
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which r
BVDSS Limited
DS(on)
10
50
40
30
20
10
0.12
0.10
0.08
0.06
0.04
0.02
0
10
is specified
-4
1
On-Resistance vs. Gate-to-Source Voltage
1 s
10 s
DC
1 ms
10 ms
100 ms
10
-3
100
V
10
GS
2
-2
Single Pulse Power
- Gate-to-Source Voltage (V)
T
10
A
= 25 °C
Time (s)
-1
Vishay Siliconix
3
1
Si5511DC
T
A
= 125 °C
www.vishay.com
10
4
I
D
100
= 4.8 A
600
5
5