SI6963BDQ Vishay, SI6963BDQ Datasheet - Page 2

• Manufacturer Part Number: SI6963BDQ
• Description: Dual P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Si6963BDQ
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20.0
16.0
12.0
8.0
4.0
0.0
0.0
b
Parameter
1.0
V
a
a
DS
Output Characteristics
V
− Drain-to-Source Voltage (V)
a
GS
= 5 thru 3 V
2.0
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3.0
2.5 V
Symbol
V
r
r
I
DS(on)
t
t
I
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
SD
t
t
rr
2.0 V
fs
gs
gd
r
f
g
g
4.0
1.5 V
5.0
New Product
V
DS
I
V
D
DS
^ −1 A, V
= −10 V, V
V
I
V
F
= −20 V, V
V
DS
V
V
V
V
V
V
DS
= −1.0 A, di/dt = 100 A/ms
GS
GS
I
DS
DS
S
DS
DD
DD
Test Condition
= 0 V, V
w −5 V, V
= −1.0 A, V
= −2.5 V, I
= V
= −4.5 V, I
= −10 V, I
= −20 V, V
= −10 V, R
= −10 V, R
GEN
GS
GS
GS
, I
GS
= −4.5 V, I
= −4.5 V, R
D
= 0 V, T
GS
= "12 V
D
D
= −250 mA
D
GS
GS
L
L
= −3.9 A
= −3.9 A
= −3.0 A
= −4.5 V
= 10 W
= 10 W
= 0 V
= 0 V
20.0
16.0
12.0
J
8.0
4.0
0.0
D
= 55_C
g
= −3.9 A
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
−0.6
−20
1.0
1.5
0.036
0.065
−0.71
Typ
T
8.6
1.2
2.8
7.0
10
33
57
65
40
30
C
S-40439—Rev. A, 15-Mar-04
25_C
= −55_C
Document Number: 72772
2.0
"100
Max
0.045
0.080
−1.4
−1.1
−10
100
−1
11
50
90
60
50
2.5
125_C
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W
3.0