SI6963BDQ Vishay, SI6963BDQ Datasheet - Page 4

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SI6963BDQ

Manufacturer Part Number
SI6963BDQ
Description
Dual P-channel 2.5-v G-s Mosfet
Manufacturer
Vishay
Datasheet

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Si6963BDQ
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.6
0.4
0.2
0.0
0.01
−50.0 −25.0
0.1
2
1
10
−4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0.0
= 250 mA
T
Threshold Voltage
J
25.0
− Temperature (_C)
10
−3
50.0
Normalized Thermal Transient Impedance, Junction-to-Ambient
75.0 100.0 125.0 150.0
0.01
100
0.1
10
10
1
0.1
−2
Limited by r
Safe Operating Area, Junction-to-Case
Square Wave Pulse Duration (sec)
V
DS
New Product
Single Pulse
DS(on)
T
− Drain-to-Source Voltage (V)
10
C
1
= 25_C
−1
10
1
200
160
120
80
40
0
10
1 ms
10 ms
100 ms
1 s
10 s
dc
−3
Single Pulse Power, Junction-to-Ambient
100
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
−2
DM
JM
− T
t
A
Time (sec)
1
= P
t
2
DM
10
Z
−1
thJA
thJA
100
S-40439—Rev. A, 15-Mar-04
t
t
1
2
(t)
Document Number: 72772
= 115_C/W
1
600
10

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