SI6963BDQ Vishay, SI6963BDQ Datasheet - Page 3

• Manufacturer Part Number: SI6963BDQ
• Description: Dual P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Document Number: 72772
S-40439—Rev. A, 15-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
0.12
0.09
0.06
0.03
0.00
10.0
30
10
8.0
6.0
4.0
2.0
0.0
1
0.0
0.0
0.0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.9 A
V
On-Resistance vs. Drain Current
= 10 V
GS
4.0
3.0
0.3
V
SD
= 2.5 V
Q
g
T
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
J
D
6.0
= 150_C
− Drain Current (A)
Gate Charge
8.0
0.6
9.0
12.0
0.9
V
GS
12.0
T
J
= 4.5 V
= 25_C
16.0
1.2
15.0
20.0
1.5
18.0
New Product
1200.0
1000.0
800.0
600.0
400.0
200.0
0.10
0.08
0.06
0.04
0.02
0.00
0.0
1.6
1.4
1.2
1.0
0.8
0.6
−50
0.0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
C
GS
1
= 3.9 A
rss
= 10 V
4.0
T
V
V
2
0
J
GS
DS
− Junction Temperature (_C)
C
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
oss
25
3
Capacitance
8.0
I
D
Vishay Siliconix
50
= 3.9 A
4
C
iss
12.0
Si6963BDQ
75
5
100
6
16.0
www.vishay.com
125
7
20.0
150
8
3