ZXMS6001N3 Zetex Semiconductors plc., ZXMS6001N3 Datasheet - Page 4
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ZXMS6001N3
Manufacturer Part Number
ZXMS6001N3
Description
Zxms6001n3 - 60v N-channel Self Protected Enhancement Mode Intellifet? Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet
1.ZXMS6001N3.pdf
(10 pages)
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Recommended operating conditions
The ZXMS6001 is optimized for use with µC operating from 5V supplies.
Electrical characteristics (at T
NOTES:
(d) Recommended input voltage range over which protection circuits function as specified.
(e) The drain current is limited to a reduced value when Vds exceeds a safe level
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
Parameter
Static Characteristics
Drain-Source Clamp
Voltage
Off state Drain Current
Off state Drain Current
Input Threshold Voltage
Input Current
Input Current
Static Drain-Source
On-State Resistance
Static Drain-Source
On-State Resistance
Current Limit
Dynamic Characteristics
Turn-On Time
(V
Turn-Off time
(V
Slew Rate On
(70 to 50% V
Slew Rate Off
(50 to 70% V
Symbol Description
IN
IN
V
V
V
T
IN
IH
A
P
to 90% I
to 90% I
Input voltage range
Ambient temperature range
High level input voltage for MOSFET
Peripheral supply voltage
(voltage to which load is referred)
D
D
DD
DD
(e)
)
)
)
)
(d)
V
I
I
V
I
I
R
R
I
t
t
-dV
DV
Symbol
DSS
DSS
IN
IN
D(LIM)
on
off
DS(AZ)
IN(th)
DS(on)
DS(on)
DS
DS
/dt
/dt
amb
on
on
= 25°C unless otherwise stated).
Min
60
1
1
(d)
4
Typ
150
335
520
0.1
1.8
1.8
1.4
1.2
70
27
26
3
1
Max
500
675
2.5
75
15
40
40
10
10
3
2
3
Unit
V/ s
V/ s
mΩ
Ω
V
V
A
A
A
A
A
s
s
Min
-40
0
4
ZXMS6001N3
I
V
V
V
V
V
circumstances
V
V
V
R
V
R
V
R
V
R
V
Conditions
D
DS
DS
DS
IN
IN
IN
IN
IN
L
DD
L
DD
L
DD
L
DD
=10mA
=22Ω, V
=22Ω, V
=22Ω, V
=22Ω, V
=+3V
=+5V, all
=3V, I
=5V, I
=5V, V
=12V, V
=32V, V
=V
=12V
=12V
=12V
=12V
GS
Max
125
60
www.zetex.com
6
6
D
D
, I
=0.1A
=0.7A
DS
IN
IN
IN
IN
D
IN
IN
=10mA
=0 to 5V,
=5V to 0V,
=0 to 5V,
=5V to 0V,
>5V
=0V
=0V
Units
°C
V
V
V