ZXMS6001N3 Zetex Semiconductors plc., ZXMS6001N3 Datasheet - Page 5

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ZXMS6001N3

Manufacturer Part Number
ZXMS6001N3
Description
Zxms6001n3 - 60v N-channel Self Protected Enhancement Mode Intellifet? Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXMS6001N3TA
Quantity:
5 000
f
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
Parameter
Protection Functions (f)
Minimum input voltage
for over temperature
protection
Maximum input voltage
for over temperature
protection
Thermal Overload Trip
Temperature
Thermal hysteresis
Unclamped single pulse
inductive energy
Tj=25°C
Unclamped single pulse
inductive energy
Tj=150°C
Inverse Diode
Source drain voltage
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
350
300
250
200
150
100
50
0
0
Input Current v Input Voltage
V
DS
V
IN
= 13.5V
= 5V
1
V
IN
- Input Voltage (V)
2
V
V
T
E
E
V
Symbol
JT
AS
AS
PROT
PROT
SD
3
4
Min
150
550
200
4
5
5
Typ
175
3.5
7
8
3
2
1
0
-40 -20
Max
Single Pulse = 300µs
6
1
Current Limit v Temperature
0
Temperature (°C)
Unit
mJ
mJ
°C
°C
20
V
V
V
40
ZXMS6001N3
Ttrip>150°C
Ttrip>150°C
I
I
V
Conditions
D(ISO)
D(ISO)
IN
60
=0V, -I
80 100 120 140
=0.7A, V
=0.7A, V
www.zetex.com
D
=1.4A
V
DS
V
IN
= 12V
= 5V
DD
DD
=32V
=32V

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