ZXMS6001N3 Zetex Semiconductors plc., ZXMS6001N3 Datasheet - Page 6

• Manufacturer Part Number: ZXMS6001N3
• Description: Zxms6001n3 - 60v N-channel Self Protected Enhancement Mode Intellifet? Mosfet
• Manufacturer: Zetex Semiconductors plc.

Application information
The current-limit protection circuitry is designed to de-activate at low Vds to prevent the load
current from being unnecessarily restricted during normal operation. The design max DC
operating current is therefore determined by the thermal capability of the package/board
combination, rather than by the protection circuitry (see graph page 8 'typical output
characteristic'). This does not compromise the products ability to self protect at low V
The overtemperature protection circuit trips at a minimum of 150°C. So the available package
dissipation reduces as the maximum required ambient temperature increases. This leads to the
following maximum recommended continuous operating currents.
Minimum copper area characteristics
For minimum copper condition as described in note (c)
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
25°C at Vin=5V
70°C at Vin=5V
85°C at Vin=5V
125°C at Vin=5V
Max Ambient Temperature T
100m
10m
200
150
100
1m
50
100µ
0
1
Transient Thermal Impedance
R
Limited
Single Pulse
D=0.2
D=0.5
T
DS(on)
T
amb
amb
DC
1m
V
Safe Operating Area
=25°C
=25°C
DS
1
1s
Drain-Source Voltage (V)
10m 100m
Pulse Width (s)
100ms
10ms
1ms
A
1
10
D=0.1
10
Single Pulse
D=0.05
Maximum continuous current
100
100
1k
6
V
100
0.6
0.4
0.2
0.0
10
IN
720
575
520
320
100µ
1
0
=5V
20
Pulse Power Dissipation
1m
40
see note (c) - Minimum Copper
Temperature (°C)
10m 100m
Derating Curve
Pulse Width (s)
60
80
1
ZXMS6001N3
100 120 140 160
Single Pulse
10
T
amb
=25°C
100
www.zetex.com
1k
DS
.