LMX2335L National Semiconductor Corporation, LMX2335L Datasheet - Page 7

• Manufacturer Part Number: LMX2335L
• Description: Pllatinum? Low Power Dual Frequency Synthesizer For Rf Personal Communications
• Manufacturer: National Semiconductor Corporation

Charge Pump Current Specification Definitions
I1 = CP sink current at V
I2 = CP sink current at V
I3 = CP sink current at V
I4 = CP source current at V
I5 = CP source current at V
I6 = CP source current at V
V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
1. I
2. I
3. I
RF Sensitivity Test Block Diagram
Note 6: N = 10,000R = 50P = 64
Note 7: Sensitivity limit is reached when the error of the divided RF output, F
[
[|I2| − |I5|]/[
[|I2
1
Do
Do-sink
Do
⁄
2
* {|I1| − |I3|}]/[
@
vs V
vs T
temp| − |I2
vs I
Do
A
= Charge Pump Output Current magnitude variation vs Temperature =
1
Do-source
= Charge Pump Output Current magnitude variation vs Voltage =
⁄
2
* {|I2| + |I5|}] * 100%
1
@
⁄
2
* {|I1| + |I3|}] * 100% and [
25˚C|]/|I2
= Charge Pump Output Current Sink vs Source Mismatch =
Do
Do
Do
Do
Do
Do
= V
= V
= ∆V
= V
= V
= ∆V
P
P
@
/2
− ∆V
P
P
25˚C| * 100% and [|I5
/2
− ∆V
1
⁄
2
* {|I4| − |I6|}]/[
@
temp| − |I5
1
⁄
2
* {|I4| + |I6|}] * 100%
@
25˚C|]/|I5
o
LD, is ≥ 1 Hz.
7
@
25˚C| * 100%
CC
and ground. Typical values are between 0.5V and 1.0V.
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