TPC8213-H TOSHIBA Semiconductor CORPORATION, TPC8213-H Datasheet
TPC8213-H
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TPC8213-H Summary of contents
Page 1
... DGR V ±20 V GSS 1 1.1 D (2) P 0. 0.087 150 ℃ −55～150 ℃ stg 1 TPC8213-H Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.085 g (typ.) Circuit Configuration 2006-11-17 ...
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... Symbol Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board (b) ( Ω 5 TPC8213-H Max Unit 83.3 114 °C/W 167 278 FR-4 25.4 × 25.4 × 0.8 (unit: mm) 2006-11-17 ...
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... D Q gs1 ∼ − (Ta = 25°C) Symbol Test Condition I — DRP DSF TPC8213-H Min Typ. Max — — ±10 — — 60 — 45 — 1.1 — 2.3 — 45 — 40 5.5 11 — 625 — 35 — ...
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... Drain-source voltage V 0.5 0.4 0.3 0.2 0 Gate-source voltage V 1000 Common source Ta = 25°C Pulse test 100 4 100 0.1 4 TPC8213-H I – 4.5 3.75 Common source Ta =25°C 5 Pulse test 3.5 3. – Common source Ta = 25℃ Pulse test ...
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... C rss Pulse test パルス測定 0 −80 −40 100 (V) Ambient temperature Ta (° 160 0 5 TPC8213-H I – −1.2 −0.4 −0.6 −0.8 −1.0 ( – 120 ...
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... Device mounted on a glass-epoxy board (a) (note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 0.1 0 Pulse width t (s) w 100 6 TPC8213-H (4) (3) (2) (1) 100 100 1000 1000 2006-11-17 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8213-H 20070701-EN 2006-11-17 ...