TPC8213-H TOSHIBA Semiconductor CORPORATION, TPC8213-H Datasheet - Page 4

• Manufacturer Part Number: TPC8213-H
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Ta = −55°C
4.5
Drain-source voltage V
Gate-source voltage V
5
0.2
1
6
8
Drain current I
10
1
100
0.4
2
⎪Y
I
I
D
D
100
fs
– V
– V
⎪ – I
3.75
DS
GS
0.6
D
3
D
3.5
Ta = −55°C
Common source
V DS = 10 V
Pulse test
10
25
GS
25
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.5V
0.8
4
(V)
(V)
3.25
2.75
3
100
1
5
4
1000
100
20
16
12
0.5
0.4
0.3
0.2
0.1
10
8
4
0
0
1
0.1
0
0
Common source
Ta = 25°C
Pulse test
8
6
10
Drain-source voltage V
V GS = 10 V
Gate-source voltage V
4.5
2
1
4.5
5
Drain current I
4
1
R
V
DS (ON)
2
I
DS
D
– V
– V
6
Common source Ta =25°C
Pulse test
DS
GS
– I
Common source
Ta = 25℃
Pulse test
3.75
3
D
D
10
8
GS
DS
(A)
V GS = 2.5V
I D = 5 A
4
TPC8213-H
(V)
(V)
2.5
1.3
10
3.5
3.25
2.75
3
2006-11-17
100
12
5