TPC8213-H TOSHIBA Semiconductor CORPORATION, TPC8213-H Datasheet - Page 3

• Manufacturer Part Number: TPC8213-H
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source−Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
(Note 7)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Pulse (Note 1)
V
V
(Ta = 25°C)
R
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
I
I
C
Q
Q
|Y
C
C
Q
GSS
DSS
V
t
t
Q
oss
on
off
t
t
gs1
SW
rss
iss
gd
th
fs
r
f
g
|
Symbol
V
I
DRP
DSF
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
V
V
D
D
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
V
= 10 mA, V
= 10 mA, V
GS
= 60 V, V
= 10 V, I
= 10 V , I
= 10 V, V
∼ − 48 V, V
∼ − 48 V, V
∼ − 48 V, V
= ±16 V, V
= 4.5 V, I
= 10 V , I
10 V
0 V
I
DR
3
w
= 5 A, V
D
GS
GS
D
(Ta = 25°C)
D
D
GS
GS
= 10 μs
GS
GS
GS
Test Condition
= 1 mA
DS
= 2.5 A
= 2.5 A
= 2.5 A
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
V
Test Condition
I
DD
D
GS
= 2.5 A
∼ − 30 V
= 0 V
D
—
D
D
= 5 A
= 5 A
= 5 A
出力
Min
Min
1.1
5.5
60
45
—
—
—
—
—
—
—
—
—
—
—
⎯
⎯
⎯
⎯
⎯
—
—
Typ.
Typ.
625
175
1.6
2.4
2.9
11
45
40
11
35
10
19
—
—
—
—
—
—
—
4
2
6
TPC8213-H
2006-11-17
−1.2
Max
Max
±10
2.3
10
56
50
20
—
—
—
—
—
—
—
—
—
—
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
A
V