HN29V1G91T-30 Renesas Electronics Corporation., HN29V1G91T-30 Datasheet - Page 30

• Manufacturer Part Number: HN29V1G91T-30
• Description: 128m X 8-bit Ag-and Flash Memory
• Manufacturer: Renesas Electronics Corporation.

HN29V1G91T-30
Program data input in multi bank program mode (In case of completing data input during busy
status)
Note:
Program data input in multi bank program mode (In case of not completing data input during busy
status)
Note:
The correspondence when the erase error occurred in Program Data Input in Erase Busy mode.
In the Program Data Input in Erase Busy mode, after an erase error occurred in one block at a two-blocks
simultaneous erase operation, a certain operation is needed in a particular case. In case of an erase
operation of one block in the same bank as the error-occurred block, the reset command FFh is needed just
before, as shown in Figure 1.
Otherwise, an illegal two-blocks erase operation will be executed, because the address data of two pages to
program remains.
After the one-block erase operation succeed, it is possible to program by specifying the address to program
again with the command 85h, because the data to be programmed stored in the buffer is maintained.
Rev.4.00, Jun.20.2004, page 30 of 89
1. Status command available
1. Status command available