HN29V51211 Renesas Electronics Corporation., HN29V51211 Datasheet - Page 20

• Manufacturer Part Number: HN29V51211
• Description: 512m And Type Flash Memory More Than 32,113-sector 542,581,248-bit - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

HN29V51211 Series
Power on and off, Serial Read Mode
Parameter
Write cycle time
Serial clock cycle time
CE setup time
CE hold time
Write pulse time
Write pulse high time
Address setup time
Address hold time
Data setup time
Data hold time
SC to output delay
OE setup time for SC
OE low to output low-Z
OE setup time before read
OE setup time before
command write
SC to output hold
OE high to output float
WE to SC delay time
RES to CE setup time
SC to OE hold time
SC pulse width
SC pulse low time
SC setup time for CE
CDE setup time for WE
CDE hold time for WE
V
RES to V
CE setup time for RES
RDY/Busy undefined for V
off
RES high to device ready
CE pulse high time
CE, WE setup time for RES
RES to CE, WE hold time
20
CC
setup time for RES
CC
hold time
CC
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CWC
SCC
CES
CEH
WP
WPH
AS
AH
DS
DH
SAC
OES
OEL
OER
OEWS
SH
DF
WSD
RP
SOH
SP
SPL
SCS
CDS
CDH
VRS
VRH
CESR
DFP
BSY
CPH
CWRS
CWRH
Min
120
50
0
0
60
40
50
10
50
10
—
0
0
100
0
15
—
50
0.3
50
20
20
0
0
20
1
1
1
0
—
200
0
0
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
50
—
40
—
—
—
40
—
—
—
—
—
—
—
—
—
—
—
—
0.3
—
—
—
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
ns
ns
ns
ns
ns
ns
µs
µs
µs
ns
ms
ns
ns
ns
Test conditions
CE = V
CE = OE = V
CE = OE = V
CE = V
CE = V
CE = V
IL
IL
IH
IH
, OE = V
, WE = V
IL
IL
, WE = V
, WE = V
IH
IH
IH
IH
Notes
1
2