HN29V51211 Renesas Electronics Corporation., HN29V51211 Datasheet - Page 34

• Manufacturer Part Number: HN29V51211
• Description: 512m And Type Flash Memory More Than 32,113-sector 542,581,248-bit - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

HN29V51211 Series
Data Recovery Read Timing Waveform
34
I/O0 to I/O7
Notes: 1. The status returns to the standby at the rising edge of CE.
/Busy
CDE
RES
RDY
WE
OE
CE
SC
2. Output data is not valid after the number of the SC pulse exceed 2112 in the recovery data read mode.
3. After any commands are written, the status can turns to the standby after the command FFH is input
and CE turns to the V
t
SCS
t
OEWS
t
CDS
t
DS
t
CES
t
WP
01H
t
DH
t
CDH
t
OER
IH
level.
t
OEL
t
t
SP
OES
t
SCC
t
SAC
D0out
t
t
SPL
SH
t
SCC
t
SAC
D1out
t
SH
*
2
t
SAC
t
SOH
t
D2111out
High
High-Z
SAC
t
COH
t
CPH
*
t
1
DF
*
2
t
CDS
t
WP
t
DS
FFH
t
DH
t
CEH
t
*
CDH
3