HN29V51211 Renesas Electronics Corporation., HN29V51211 Datasheet - Page 32
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HN29V51211
Manufacturer Part Number
HN29V51211
Description
512m And Type Flash Memory More Than 32,113-sector 542,581,248-bit - Hitachi Semiconductor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HN29V51211.pdf
(42 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HN29V51211T-50H
Manufacturer:
ALESIS
Quantity:
622
HN29V51211 Series
Program (4) with CA before SC and Status Data Polling Timing Waveform
Program (4) with CA after SC and Status Data Polling Timing Waveform
I/O0 to I/O7
32
I/O0 to I/O7
/Busy
/Busy
Notes: 1. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – n).(i
CDE
RES
RDY
Notes: 1. The programming operation is not guaranteed when the number of the SC pulse exceeds 2112.(0
CDE
RES
RDY
WE
OE
CE
SC
WE
CE
OE
SC
2. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – m).(j
3. Any commands, including reset command FFH, cannot be input while RDY/Busy is V
4. The status returns to the standby status after RDY/Busy returns to High-Z.
5. By using program (4), data can be rewritten for each sector.
6. This interval can be repeated (h – 1) cycle.(1
2. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – m).(j
3. Any commands, including reset command FFH, cannot be input while RDY/Busy is V
4. The status returns to the standby status after RDY/Busy returns to High-Z.
5. By using program (4), data can be rewritten for each sector.
6. This interval can be repeated h cycle.(1
t
SCS
t
t
t
RP
SCS
OEWS
t
t
RP
t
OEWS
CDS
t
CDS
t
DS
t
t
CES
WP
11H
t
t
DS
t
t
CWC
CES
WP
t
11H
WPH
t
t
t
CWC
CDS
CDH
t
t
DH
WPH
t
t
CDS
CDH
t
t
t
AS
WP
DH
t
SA(1)
CWC
t
t
AS
t
WP
WPH
t
t
SA(1)
AH
CWC
t
WPH
t
t
t
AH
AS
WP
t
SA(2)
DB
t
CWC
t
t
t
WPH
AS
WP
t
t
AH
SA(2)
DB
t
t
t
AS
AH
WP
t
CA(1)
t
t
RBSY
CWC
t
WSD
CDH
t
t
t
SDS
WPH
CDSS
t
AH
t
WSD
PD0
t
RBSY
t
t
t
AS
t
WP
SDH
h
RS
CA(2)
h
t
SCC
t
SPL
t
t
2048 + 64)
CDH
AH
2048 + 64)
High-Z
t
t
SDS
PD1
CDSS
t
SP
PD(n)
t
t
SDH
RS
t
SCC
t
PD(k)*
PD(n+1) PD(n+i)*
t
SPL
CDS
t
High-Z
*
SP
1
t
t
SP
SW
t
CDSH
1
t
t
WP
AS
t
CA(1)
t
CWC
CDS
t
*
SP
t
WPH
1
t
t
SW
t
AH
1
h cycle*
CDSH
t
t
t
WP
t
OL
AS
AS
WP
CA(1)'
CA(2)
t
CWC
.
t
t
WPH
CDH
t
t
AH
6
AH
h–1 cycle*
t
t
CDSS
SDS
t
t
AS
WP
CA(2)'
OL
PD(m) PD(m+1) PD(m+j)*
.
t
CDH
t
AH
t
SDH
t
t
t
6
SCC
SDS
CDSS
t
PD(m) PD(m+1) PD(m+j)*
SPL
2111 – n, 0
2111 – m, 0
t
t
SP
SDH
t
SCC
t
k
SPL
2111)
t
SP
2111 – m, 0
n
t
*
SP
m
2
2111)
t
SW
2111)
2
t
t
*
SP
DS
2
t
40H
WP
t
2
SW
t
DS
t
t
40H
t
WP
CEH
DB
t
t
m
OEPS
DH
t
CDH
t
t
t
SCHW
CEH
DB
t
t
OEPS
DH
2111)
t
t
CDH
CE
t
SCHW
I/O7=V
t
t
ASP
CE
I/O7=V
t
*
ASP
t
3
OE
*
OL
t
3
t
OE
DF
OL
t
DF
I/O7=V
High-Z*
I/O7=V
High-Z*
t
RDY
t
t
RDY
DF
t
t
DF
CDS
OH
t
CDS
OH
4
4