FGA90N33AT Fairchild Semiconductor, FGA90N33AT Datasheet

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FGA90N33AT

Manufacturer Part Number
FGA90N33AT
Description
Fga90n33at 330v, 90a Pdp Trench Igbt
Manufacturer
Fairchild Semiconductor
Datasheet

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©2008 Fairchild Semiconductor Corporation
FGA90N33AT Rev. A
Absolute Maximum Ratings
Thermal Characteristics
Notes:
(1) Repetitive test , Pulse width=100usec , Duty=0.1
(2) Half sine wave , D<0.01, Pulse width<5usec
FGA90N33AT
330V, 90A PDP Trench IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
*I
V
V
I
I
I
P
T
T
T
R
R
C
C pulse(1)
C pulse(2)
C
stg
J
L
CES
GES
D
θJC
θJA
pluse limited by max Tj
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Pulsed Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G C E
CE(sat)
=1.1V @ I
Description
Parameter
TO-3P
C
= 20A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 25
= 25
= 25
= 100
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
o
o
o
o
C
C
C
C
o
C
G
Typ.
-
-
-55 to +150
-55 to +150
Ratings
± 30
330
220
330
223
300
90
89
C
Max.
E
0.56
40
April 2008
www.fairchildsemi.com
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C
tm

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FGA90N33AT Summary of contents

Page 1

... Repetitive test , Pulse width=100usec , Duty=0.1 (2) Half sine wave , D<0.01, Pulse width<5usec *I pluse limited by max Tj C ©2008 Fairchild Semiconductor Corporation FGA90N33AT Rev. A General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- = 20A C tions where low conduction and switching losses are essential ...

Page 2

... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA90N33AT Rev. A Packaging Package Type Qty per Tube TO-3P Tube T = 25°C unless otherwise noted C Test Conditions = 0V 250µ ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.0 Common Emitter V = 15V GE 1.8 1.6 1.4 1.2 1.0 0 Collector-EmitterCase Temperature, T FGA90N33AT Rev. A Figure 2. Typical Output Characteristics 160 10V 9V 120 [V] CE Figure 4. Transfer Characteristics 160 120 80 40 ...

Page 4

... V = 100V Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 200 100 d(on Gate Resistance, R FGA90N33AT Rev. A Figure 8. Capacitance Characteristics GE 4000 Common Emitter 125 C C 3000 2000 1000 0 0 [V] GE Figure 10. SOA Characteristics 500 100 10 ...

Page 5

... Collector Current, I Figure 15. Turn off Switching SOA Characteristics 400 100 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V FGA90N33AT Rev. A Figure 14. Turn-off Characteristics vs d(on) 100 100 60 80 100 0 [A] C 100 600 [ Collector Current Common Emitter Ω ...

Page 6

... Typical Performance Characteristics Figure 16.Transient Thermal Impedance of IGBT 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 0.001 1E-5 FGA90N33AT Rev. A 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration [sec Duty Factor t1/t2 Peak T = Pdm x Zthjc + www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions ø3.20 ±0.10 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 5.45TYP [5.45 ] ±0.30 FGA90N33AT Rev. A TO-3P 15.60 ±0.20 13.60 ±0.20 9.60 ±0.20 5.45TYP [5.45 ] ±0.30 7 4.80 ±0.20 +0.15 1.50 –0.05 1.40 ±0.20 +0.15 0.60 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA90N33AT Rev. A FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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