FGA90N33AT Fairchild Semiconductor, FGA90N33AT Datasheet - Page 3

• Manufacturer Part Number: FGA90N33AT
• Description: Fga90n33at 330v, 90a Pdp Trench Igbt
• Manufacturer: Fairchild Semiconductor

FGA90N33AT Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
160
120
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
40
160
120
0
80
40
0
25
0
0
Common Emitter
V
T
T
Common Emitter
V
T
C
C
GE
Temperature at Variant Current Level
Collector-EmitterCase Temperature, T
GE
C
Characteristics
= 25
= 125
= 25
= 15V
= 15V
Collector-Emitter Voltage, V
o
o
Collector-Emitter Voltage, V
C
o
C
C
1
50
1
15V
12V
20V
2
75
2
10V
I
C
3
90A
40A
= 20A
V
100
9V
GE
CE
3
8V
7V
CE
= 6V
[V]
4
[V]
C
[
o
C
]
125
5
4
3
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
160
120
160
120
20
16
12
80
40
80
40
8
4
0
0
0
0
0
0
Common Emitter
V
T
T
T
CE
C
C
C
= 25
= 125
= 125
40A
= 20V
I
C
o
2
Collector-Emitter Voltage, V
= 20A
C
o
o
4
C
Gate-Emitter Voltage, V
C
1
Gate-Emitter Voltage,V
10V
12V
15V
20V
4
8
2
90A
6
9V
12
3
Common Emitter
T
8
C
8V
GE
GE
= 25
V
7V
GE
[V]
[V]
CE
o
16
C
= 6V
4
[V]
10
GE
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20
12
5