FGA90N33AT Fairchild Semiconductor, FGA90N33AT Datasheet - Page 4

• Manufacturer Part Number: FGA90N33AT
• Description: Fga90n33at 330v, 90a Pdp Trench Igbt
• Manufacturer: Fairchild Semiconductor

FGA90N33AT Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
100
20
16
12
200
15
12
10
8
4
0
9
6
3
0
0
0
0
Common Emitter
T
Gate Resistance
C
= 25
I
C
= 20A
o
4
20
20
Gate-Emitter Voltage, V
C
t
Gate Resistance, R
t
r
d(on)
V
Gate Charge, Q
CC
= 100V
8
40
40
40A
90A
Common Emitter
V
I
T
T
12
C
C
C
CC
60
60
200V
= 20A
g
= 25
= 125
Common Emitter
T
= 200V, V
[nC]
C
G
GE
= 125
o
[ Ω ]
C
o
C
[V]
GE
16
80
o
80
C
GE
= 15V
20
100
100
4
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
1000
5500
Figure 12. Turn-off Characteristics vs.
4000
3000
2000
1000
0.01
100
500
100
0.1
10
10
1
0
0.1
0
1
Common Emitter
V
I
T
T
*Notes:
C
C
C
CC
1. T
2. T
3. Single Pulse
= 20A
= 25
= 125
= 200V, V
Collector-Emitter Voltage, V
C
J
Gate Resistance
Collector-Emitter Voltage, V
= 150
o
= 25
20
C
o
C
Gate Resistance, R
o
o
C
C
GE
C
C
C
res
ies
oes
= 15V
10
40
1
60
Common Emitter
V
T
G
C
GE
[
= 25
Ω
= 0V, f = 1MHz
100
100
10 ms
CE
]
1ms
DC
CE
t
t
o
[V]
d(off)
f
µ
C
80
[V]
s
10
10
µ
s
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100
500
30