GT8G134 TOSHIBA Semiconductor CORPORATION, GT8G134 Datasheet
GT8G134
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GT8G134 Summary of contents
Page 1
... T 150 j −55~150 T stg and the significant change Reliability Handbook (“Handling Symbol Rating R (1) 114 th (j-a) R (2) 208 th (j-a) 1 GT8G134 Unit 1,2 EMITTER °C 3 EMITTER (Gate drive connection) °C 4 GATE 5,6,7,8 COLLECTOR JEDEC ― in JEITA ― TOSHIBA － Weight: 0.035 g (typ.) Circuit Configuration ...
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... < = 100 Duty cycle < off Note 2b : Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit : mm) 2 GT8G134 Min Typ. Max Unit ⎯ ⎯ ± 10 ⎯ ⎯ 10 0.65 1.0 1.35 ⎯ ⎯ 3.4 ⎯ ⎯ 4560 ⎯ ⎯ 0.6 ⎯ ...
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... You should be design to don’t flow collector current through terminal number 3 . ●definition of dv/dt The slope of V from 30v to 90v (attached figure.1) CE dv/dt = (90V-30V) / (⊿t) = 60V / ⊿t ●waveform C(begin 0V, 0A ●Gate drive connection 5,6,7,8 1,2 ●waveform (expansion) I (end) C dv/dt period GT8G134 V CE 90V 30V ⊿t driver 2007-07-23 ...
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... Collector-emitter voltage 2 −50 5 Ambient temperature Ta (°C) 1.6 1.2 0.8 0.4 0 −50 4 Ambient temperature Ta (°C) 4 GT8G134 I – 2.7 3 2 Common emitter Ta = 25° – Ta CE(sat 150 A 120 90 60 Common emitter 2 100 ...
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... Common emitter Ta = 25° Gate-emitter voltage V 400 300 V CE 200 120 90 60 100 0.1 1000 0 5 GT8G134 V – 150 A 120 ( – Common emitter 300 Ω 25°C ...
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... 350 V Ta < = 70° 2 Ω < < Ω 120 Peak collector current I CP (A) 200 160 120 1000 0 160 200 6 GT8G134 Minimum Gate Drive Area Ta = 25° Gate-emitter voltage V (V) GE 2007-07-23 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 GT8G134 20070701-EN 2007-07-23 ...