GT8G134 TOSHIBA Semiconductor CORPORATION, GT8G134 Datasheet - Page 6

• Manufacturer Part Number: GT8G134
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
800
600
400
200
10
0
1
0
V CM = 350 V
Ta < = 70°C
V GE = 2.5 V
56 Ω < = R G < = 91 Ω
Collector-emitter voltage V CE (V)
40
Peak collector current I CP (A)
Maximum Operating Area
10
80
C – V
CE
C oes
C res
120
100
C ies
Common emitter
V GE = 0 V
f = 1 MHz
Ta = 25°C
160
1000
200
6
200
160
120
80
40
0
0
Gate-emitter voltage V
1
Minimum Gate Drive Area
Ta = 25°C
2
70
3
GE
(V)
4
GT8G134
2007-07-23
5