IHD215 CT-Concept Technologie AG, IHD215 Datasheet - Page 11

• Manufacturer Part Number: IHD215
• Description: Intelligent Half-bridge Drivers For Igbts And Power Mosfets
• Manufacturer: CT-Concept Technologie AG

Pin 9 and 10
GND and Vcc
These contacts are used for the power
supply of the driver module. The nominal
supply voltage is 12V to 15V. In order to
ensure reliable starting of the integrated
DC/DC
electrolytic capacitor with high ripple
current capability must be placed in the
immediate proximity of pins 9 and 10. Its
capacitance should not be smaller than
the sum of the capacitances connected to
terminals Cs1 (pin 34) and Cs2 (pin 23).
The current drawn is determined by the
number of transistors driven, their gate
capacitance and the switching frequency.
Due to the high isolation of the supply
terminals compared with all other pins,
the drivers of the IHD series can be
supplied by any potential. It need not
necessarily be identical with the input
potential.
The internal turn-on thresholds were also
designed to permit operation at 12V. This
makes sense above all when using transis-
tors that have very large short-circuit
currents at higher gate voltages (low satu-
ration types).
I n t e r n e t :
Fig. 4 Status acknowledgement outputs
converter,
w w w . I G B T - D r i v e r . c o m
a
low-inductance
Data Sheet & Application Manual
12V to
voltage, or with only a positive gate volt-
age depending on the power transistors
used and the application (see description
of pin 35, COM1).
The output stages of the drivers of the IHD
series are very ruggedly dimensioned. The
maximum
charge/discharge current has a value of
1.5A for the IHD215 and 8A for both the
IHD280 and the IHD680. This allows the
largest IGBT and power MOSFET modules
to be driven. It is also possible to directly
drive a number of power modules con-
nected in parallel. The charge/discharge
current must be limited by an external
gate resistance. It should be noted that the
total voltage rise (twice 12V to 15V) must
be taken into account at
gate.
The gate of the power transistor must be
connected via a lead of shortest possible
length with terminal G1 G2 . To allow
the switching speed to be set independ-
ently at both turn-on and turn-off, a
design with two gate resistors and a
diode can be used (see Fig. 5).
IHD 215/280/680
It should be noted that the drivers them-
selves are not protected against self-
overload. A short circuit between the gate
and emitter terminals - caused by a
defective
example - can lead to thermal destruction
of the driver.
Pin 36 pin 25
Output G1 G2
Output G1 G2 is the driver output for
the gate driving. This is effected with
15V depending on the supply
power
permissible
semiconductor,
driving of the
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gate
for