BUK108-50GL NXP Semiconductors, BUK108-50GL Datasheet - Page 4

• Manufacturer Part Number: BUK108-50GL
• Description: Powermos Transistor Logic Level Topfet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
TRANSFER CHARACTERISTICS
T
SWITCHING CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUE
REVERSE DIODE CHARACTERISTICS
T
ENVELOPE CHARACTERISTICS
1 During overload before short circuit load protection operates.
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 1996
PowerMOS transistor
Logic level TOPFET
mb
SYMBOL PARAMETER
g
I
mb
SYMBOL PARAMETER
t
t
t
t
t
t
t
t
SYMBOL PARAMETER
I
mb
SYMBOL PARAMETER
V
t
SYMBOL PARAMETER
L
L
D(SC)
d on
r
d off
f
d on
r
d off
f
S
rr
fs
d
s
SDS
= 25 ˚C
= 25 ˚C. R
= 25 ˚C
Forward transconductance
Drain current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Continuous forward current
Forward voltage
Reverse recovery time
Internal drain inductance
Internal source inductance
I
= 50
. Refer to waveform figures and test circuits.
1
CONDITIONS
V
V
CONDITIONS
V
resistive load R
V
resistive load R
V
inductive load I
V
inductive load I
CONDITIONS
I
not applicable
CONDITIONS
Measured from upper edge of tab
to centre of die
Measured from source lead
soldering point to source bond pad
S
DS
DS
DD
DD
DD
DD
= 15 A; V
0.01
= 10 V; I
= 13 V; V
= 13 V; V
= 13 V; V
= 13 V; V
= 13 V; V
CONDITIONS
T
mb
4
IS
DM
25 ˚C; V
IS
IS
IS
IS
IS
= 0 V; t
2
DM
DM
= 7.5 A t
= 5 V
= 5 V
= 0 V
= 5 V
= 0 V
L
L
= 4
= 4
= 3 A
= 3 A
IS
p
= 300 s
= 0 V
p
300 s;
MIN.
MIN.
MIN.
MIN.
MIN.
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
TYP.
1.5
4.5
1.5
0.5
1.0
2.5
7.5
25
10
BUK108-50GL
9
8
6
1
-
Product specification
MAX.
13.5
MAX.
MAX.
MAX.
MAX.
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
UNIT
UNIT
A
nH
nH
S
A
V
-
s
s
s
s
s
s
s
s