BUK108-50GL NXP Semiconductors, BUK108-50GL Datasheet - Page 6

• Manufacturer Part Number: BUK108-50GL
• Description: Powermos Transistor Logic Level Topfet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
June 1996
PowerMOS transistor
Logic level TOPFET
0.20
0.15
0.10
0.05
12
11
10
40
35
30
25
20
15
10
Fig.9. Typical transfer characteristics, T
9
8
7
6
5
4
3
2
1
0
5
0
0
Fig.8. Typical on-state resistance, T
Fig.10. Typical transconductance, T
I
0
D
gfs / S
g
0
0
ID / A
RDS(ON) / Ohm
fs
= f(V
R
= f(I
DS(ON)
VIS / V =
IS
5
D
) ; conditions: V
); conditions: V
10
= f(I
2
10
D
); parameter V
3.5
20
15
VIS / V
ID / A
ID / A
4
DS
4
DS
= 10 V; t
= 10 V; t
20
30
IS
4.5
; t
p
25
= 250 s
p
p
6
= 250 s
= 250 s
j
j
BUK108-50GL
40
BUK108-50GL
= 25 ˚C.
= 25 ˚C.
BUK108-50GL
5
j
= 25 ˚C.
30
5.5
6
50
8
35
6
Fig.11. Normalised drain-source on-state resistance.
Fig.12. Typical overload protection characteristics.
a = R
120
100
Fig.13. Normalised limiting overload dissipation.
100
80
60
40
20
0.1
10
0
1
t
1.5
1.0
0.5
-60
d sc
0.01
PDSM%
0
DS(ON)
-60 -40 -20
td sc / ms
P
= f(P
a
-40
DSM
/R
% =100 P
DS
-20
DS(ON)
); conditions: V
0
25 ˚C = f(T
0
DSM
20
20
/P
PDS / kW
Tj / C
Tmb / C
40
40
DSM
0.1
Normalised RDS(ON) = f(Tj)
j
IS
); I
60
(25 ˚C) = f(T
60
D
BUK108-50GL
Product specification
4 V; T
80 100 120 140
= 7.5 A; V
80
100
j
BUK108-50GL
= 25 ˚C.
mb
PDSM
120
IS
Rev 1.000
)
= 5 V
140
1