FDN5632N-F085 Fairchild Semiconductor, FDN5632N-F085 Datasheet

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FDN5632N-F085

Manufacturer Part Number
FDN5632N-F085
Description
N-channel Logic Level Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FDN5632N-F085
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ON/安森美
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20 000
©2008 Fairchild Semiconductor Corporation
FDN5632N_F085 Rev. A (W)
FDN5632N_F085
N-Channel Logic Level PowerTrench
60V, 1.6A, 98mΩ
Features
R
R
Typ Q
Low Miller Charge
Qualified to AEC Q101
RoHS Compliant
DS(on)
DS(on)
g(TOT)
= 98mΩ at V
= 82mΩ at V
= 9.2nC at V
GS
GS
= 4.5V, I
= 10V, I
GS
= 10V
D
D
= 1.6A
= 1.7A
1
Applications
DC/DC converter
Motor Drives
®
MOSFET
September 2008
www.fairchildsemi.com
tm

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FDN5632N-F085 Summary of contents

Page 1

... Features R = 98mΩ 4.5V, I DS(on 82mΩ 10V, I DS(on Typ Q = 9.2nC 10V g(TOT) GS Low Miller Charge Qualified to AEC Q101 RoHS Compliant ©2008 Fairchild Semiconductor Corporation FDN5632N_F085 Rev. A (W) ® MOSFET Applications = 1.6A DC/DC converter = 1.7A Motor Drives 1 September 2008 tm www.fairchildsemi.com ...

Page 2

... Reverse Transfer Capacitance rss R Gate Resistance G Q Total Gate Charge at 10V g(TOT) Q Gate to Source Gate Charge gs Q Gate to Drain “Miller“ Charge gd FDN5632N_F085 Rev 25°C unless otherwise noted A Parameter = 10V copper pad area Package Reel Size SSOT3 7” 25° ...

Page 3

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDN5632N_F085 Rev ...

Page 4

... Figure 3. 100 V = 10V GS 10 SINGLE PULSE 111 θ FDN5632N_F085 Rev 100 125 150 ( ) o C Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION(s) Normalized Maximum Transient Thermal Impedance ...

Page 5

... Saturation Characteristics 2.0 µ PULSE DURATION = 80 s 1.8 DUTY CYCLE = 0.5% MAX 1.6 1.4 1.2 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE J Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature FDN5632N_F085 Rev. A (W) 12 PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX 100us 1ms 6 10ms 100ms 100 300 Figure 6. 200 ...

Page 6

... Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 1. 20V GATE CHARGE(nC) g Figure 13. Gate Charge vs Gate to Source Voltage FDN5632N_F085 Rev. A (W) 1000 100 f = 1MHz V 10 0.1 80 120 160 ( ) o C Figure 12. Capacitance vs Drain 30V 40V ...

Page 7

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ F-PFS™ FRFET CorePLUS™ CorePOWER™ Global Power Resource CROSSVOLT™ ...

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