FDN5632N-F085 Fairchild Semiconductor, FDN5632N-F085 Datasheet - Page 3

• Manufacturer Part Number: FDN5632N-F085
• Description: N-channel Logic Level Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

FDN5632N_F085 Rev. A (W)
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
t
t
t
t
t
t
V
t
Q
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
d(on)
d(off)
f
on
r
off
rr
Symbol
SD
rr
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Parameter
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
T
A
= 25
o
C unless otherwise noted
V
V
I
I
I
SD
SD
SD
DD
GS
certification.
= 1.7A
= 0.85A
= 1.7A, dI
= 30V, I
= 10V, R
Test Conditions
3
D
SD
GEN
= 1.0A
/dt = 100A/µs
= 6Ω
Min
-
-
-
-
-
-
-
-
-
-
16.0
Typ
1.7
5.2
1.3
0.8
0.8
7.9
15
-
-
www.fairchildsemi.com
12.9
1.25
10.3
Max
1.0
30
21
-
-
-
-
Units
nC
ns
ns
ns
ns
ns
ns
ns
V