FDN5632N-F085 Fairchild Semiconductor, FDN5632N-F085 Datasheet - Page 2

• Manufacturer Part Number: FDN5632N-F085
• Description: N-channel Logic Level Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

FDN5632N_F085 Rev. A (W)
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
MOSFET Maximum Ratings
Thermal Characteristics
B
I
I
V
r
C
C
C
R
Q
Q
Q
V
V
I
P
T
R
R
Symbol
DSS
GSS
DS(on)
Symbol
D
J
VDSS
GS(th)
DSS
GS
D
iss
oss
rss
G
θJC
θJA
Device Marking
g(TOT)
gs
gd
, T
STG
5632
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-252, 1in
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (V
Pulsed
Power Dissipation
Operating and Storage Temperature
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
FDN5632N_F085
Parameter
Device
GS
T
= 10V)
A
Parameter
= 25°C unless otherwise noted
T
Package
A
SSOT3
= 25°C unless otherwise noted
V
f = 1MHz
f = 1MHz
V
V
I
I
I
I
T
I
V
V
V
D
D
D
D
D
A
DS
GS
GS
DS
GS
GS
= 250µA, V
= 1.7A, V
= 1.6A, V
= 1.6A, V
= 1.7A, V
= 150
= 15V, V
= 0 to 10V
= 48V,
= V
= 0V
= ±20V
Test Conditions
DS
2
o
C
, I
GS
GS
GS
GS
2
Reel Size
D
GS
GS
copper pad area
= 250µA
= 10V
= 6V
= 4.5V
= 10V,
7”
= 0V
= 0V,
V
I
T
D
DD
A
= 1.7A
= 125
= 20V
o
C
Tape Width
8mm
Min
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-55 to +150
Ratings
475
Typ
107
111
1.4
9.2
1.5
1.4
2.0
±20
60
30
57
62
70
1.1
75
1.7
60
10
-
-
-
-
www.fairchildsemi.com
±100
Max
250
3000 units
135
12
Quantity
82
88
98
1
-
3
-
-
-
-
-
-
Units
o
o
Units
µA
nA
mΩ
nC
nC
nC
C/W
C/W
pF
pF
pF
Ω
V
o
W
V
V
V
A
C