FQNL1N50B Fairchild Semiconductor, FQNL1N50B Datasheet

Page 1

... C (Note 1) (Note 1) (Note 1) (Note 2) = 25°C) C Parameter March 2001 QFET = 9 DS(on " " ! " ! " " " " " FQNL1N50B Units 500 V 0.27 A 0. 0.27 A 0.15 mJ 4.5 V/ns 1.5 W 0.012 W/°C -55 to +150 °C 300 °C Typ Max Units -- 83 °C/W Rev. A, March 2001 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature ≤ 1.4A, di/dt ≤ 200A/us, V ≤ DSS, 3. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 A GS ...

Page 3

... Drain Current and Gate Voltage. 200 C 150 iss C oss 100 50 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics. ©2001 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 10V ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Note : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... GS GS 3mA 3mA Resistive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT R ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveform Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 4.90 0.50 0.10 3.90 ©2001 Fairchild Semiconductor Corporation TO-92L 0.20 0.70MAX. 0.80 0.10 1.00MAX. 1.27TYP [1.27 ] 0.20 2.54 TYP 0.20 0.45 0.10 Rev. A, March 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...